Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices
arxiv(2023)
摘要
Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting
graphene devices to achieve fascinating transport properties, such as Klein
tunneling, electron optics and other novel quantum transport phenomena.
However, depositing graphene on h-BN creates moiré superlattices, whose
electronic properties can be significantly manipulated by controlling the
lattice alignment between layers. In this work, the effects of these moiré
structures on the transport properties of graphene are investigated using
atomistic simulations. At large misalignment angles (leading to small moiré
cells), the transport properties (most remarkably, Klein tunneling) of pristine
graphene devices are conserved. On the other hand, in the nearly aligned cases,
the moiré interaction induces stronger effects, significantly affecting
electron transport in graphene. In particular, Klein tunneling is significantly
degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong
quantum confinement) effects and non-linear I-V characteristics are observed.
P-N interface smoothness engineering is also considered, suggesting as a
potential way to improve these transport features in graphene/h-BN devices.
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