Electro-Thermal Investigation of SiGe HBTs: A Review

Thomas Zimmer,Sebastien Fregonese,Anjan Chakravorty

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2023）

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摘要

This paper presents a review on the electro-thermal investigation of SiGe HBT technologies. After introducing a simple method of measuring thermal resistance (R-TH), analytical studies on the calculation of R-TH is discussed and subsequently the contribution of the back-end-of-line metal lines is estimated. Based on this analysis, strategies for the optimum emitter finger placements while designing a power amplifier cell are investigated. Finally, the thermal impedance measurement and modelling aspects are discussed.

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关键词

SiGe HBTs,R-TH,self-heating,pulsed,measurements,heat transfer equation,electro-thermal compact modelling,thermal impedance,low frequency S-parameter,mutual heating,PA-cell design,BEOL: Back-end-Of-Line,FEOL,Front-end-Of-Line

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