A Circuit Designer's Perspective on Transistor Modelling Challenges for 6G, Fiberoptics, and Quantum Computing ICs

S. P. Voinigescu,S. Bonen,S. Pati Tripathi, S. Bagchi, G. Cooke, T. Jager, A. Bharadwaj, J. Zhao

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)(2023)

引用 0|浏览3
暂无评分
摘要
This paper reviews how HBT and FET compact models should be effectively used in the initial design of mm-wave 6G and fiberoptics circuits above 100 GHz and suggests which high frequency core model parameters and RCL parasitics require refinements. The latter are in part limited by on-die transistor S-parameter measurement and de-embedding inaccuracies at JBand. Finally, we discuss the compact model research challenges that remain in capturing optimal noise figure current density and quantum phenomena at cryogenic temperatures, and the numerical convergence issues observed in existing commercial SiGe BiCMOS and CMOS process design kits below 20 K.
更多
查看译文
关键词
compact model,cryogenic low noise amplifier,D-Band,HBT,J-Band,MOSFET,modulator driver,power amplifier,quantum capacitance,tunneling capacitance,tunnel current
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要