Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

Giovanni Giorgino,Marcello Cioni,Cristina Miccoli, Leonardo Gervasi, Marcello Francesco Salvatore Giuffrida, Martina Ruvolo,Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo,Maurizio Moschetti,Aurore Constant,Cristina Tringali,Ferdinando Iucolano,Alessandro Chini

e-Prime: Advances in Electrical Engineering, Electronics and Energy（2023）

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摘要

•RTP improvement of p-GaN can reduce the temperature degradation of on-resistance.•Mg concentration increase in p-GaN can reduce the temperature increase of on-resistance.•Dynamic on-resistance degradation is not changing with temperature increase.•Al% increase in AlGaN can lead to higher power levels but worse lifetime performances.

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关键词

GaN HEMTS,Magnesium doping,p-GaN activation,Normally-off,Power applications,Dynamic RON,Temperature behaviour, Trapping mechanisms, Off-state stress, RF applications,Normally-on,Aluminum content,Output power,HTRB

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