Improving the RF Performance of InP DHBT Using Ft-Doubler Technique
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS（2023）
关键词
Indium phosphide,III-V semiconductor materials,DH-HEMTs,Heterojunction bipolar transistors,Current measurement,Transistors,Cutoff frequency,f(T)-doubler,cut-off frequency( f(T) ),heterojunction bipolar transistor (HBT),InP,small-signal equivalent circuit
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