Analytical model for the injection recombination current in quantum well micro-light emitting diodes

This paper presents a novel physics-based analytical model for the injection recombination current in micro-light emitting diodes (mu LEDs) with multiple quantum wells (MQWs), specifically excluding trap-assisted tunneling contributions at low forward voltages. The model simplifies the complex MQW structure by representing MQWs as a single equivalent quantum well (EQW). The mu LED current is attributed to the recombination of injected holes and electrons within this EQW. Key parameters of the model encompass the EQW's position within the depletion region, hole diffusion coefficient, series resistance, and thermal resistance of the device. Experimental validation of the model is performed using current-voltage characteristics obtained from InGaN/GaN QW mu LEDs.