Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiNx and GaN

Zhi-Xuan Zhang,Shi-Cong Jiang,Wan-Yu Wu,Peng Gao,Linqin Jiang,Yu Qiu,Dong-Sing Wuu,Feng-Min Lai,Shui-Yang Lien,Wen-Zhang Zhu

SURFACES AND INTERFACES（2023）

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摘要

•The Si-doped gallium nitride thin film was prepared using PEALD.•Controlling the SiNx sub-cycle ratio can achieve different doping concentrations.•The efficient silicon doping improved the electrical contact property of GaN films.

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关键词

Si-doped GaN,Plasma-enhanced atomic layer deposition,Contact resistance

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