A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (Al_xGa_1-x)₂O₃ Thin Films

A process for fabricating Al-doped beta-Ga2O3 thin films of the (AlxGa1-x)(2)O-3 composition by plasma-enhanced chemical vapor deposition has been studied for the first time. High-purity gallium metal, aluminum iodide (AlI3), and high-purity oxygen were used as precursors. Low-temperature plasma at a reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. The plasma-enhanced deposition process was studied by optical emission spectroscopy in the range of 180-1100 nm. The obtained thin films of the (AlxGa1-x)(2)O-3 system with the amount of the Al2O3 phase up to 20% were studied by various analytical methods.