Germanium monolayer doping: successes and challenges for the next generation Ge devices

The growing interest in nanoelectronics and photonics, combined with the development of new germaniumbased devices, provide the impetus to develop new doping methods suitable to new germanium challenges. The monolayer doping technique is one of the most promising techniques for nanostructure doping, especially for the possibility to perform conformal doping on nanostructured materials, the complete absence of lattice damage, the high control of the dopant and the reduction of the stochastic doping effects. In this paper, works that develop the monolayer doping technique on germanium will be described and analyzed, highlighting advantages and disadvantages of different possible approaches to Ge doping and finally outlining the future steps for the implementation of monolayer doping technique on device manufacturing.