Impact of Donor Ionization on 2DEG Charge Density in -doped -(Al_xGa_1-x)₂O₃/Ga_{2O₃ HFET : An Analytical Study}

Akash Patnaik,Neeraj K. Jaiswal,Pankaj Sharma

2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO（2023）

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摘要

An analytical model for 2-dimensional electron gas (2DEG) charge density (n(s)) in beta-(AlxGa1-x)(2)O-3/Ga2O3 Heterostructure Field Effect Transistor. The presented model takes into account the incomplete donor ionization. The model is solved region-wise owing to the complex n(s) variation with Fermi level. The presented model agrees well with numerical solution and experimental data. The model is then used to study the effect of donor ionization energy and donor density on 2DEG charge density.

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Impact of Donor Ionization on 2DEG Charge Density in -doped -(AlxGa1-x)2O3/Ga2O3 HFET : An Analytical Study

Impact of Donor Ionization on 2DEG Charge Density in -doped -(Al_xGa_1-x)₂O₃/Ga_{2O₃ HFET : An Analytical Study}