Near-Ultraviolet Lateral Photovoltaic Effect of Epitaxial Nb:SrTiO3 Films on Si Substrate Using TiN as a Buffer Layer

In recent years, significant attention has been directed toward exploring heterojunctions based on perovskite materials for ultraviolet photodetectors. This study focuses on the fabrication of high-quality single-crystal Nb:SrTiO3 (NSTO) films on Si substrates, achieved through the utilization of a TiN thin film as a buffer layer. The investigation delves into the lateral photovoltaic effect exhibited by the film. Characterization using X-ray diffraction and high-resolution transmission electron microscopy confirms the exceptional quality of the NSTO film. Notably, the observed position sensitivity attains an impressive value of 43.9 mV mm−1. Analysis of the lateral photovoltaic effect reveals response and relaxation times of approximately 105.6 ns and 4.49 µs, respectively. Intriguingly, fitting results for the relaxation time indicate minimal defects within the NSTO/TiN/Si heterostructures. These findings underscore the significant potential of NSTO/TiN/Si heterojunctions, presenting a promising avenue for their widespread application in the realm of position change technology.