Characteristic Parameters Analysis of Bond-wire Failure for Multi-chips Parallel IGBT Modules

Multi-chips parallel IGBT module is widely used in new energy power grid connection, flexible AC and DC transmission, electric vehicles and charging devices, rail transit electric traction and other fields, and the reliability of their operation is very important. Therefore, how to select the characteristic parameters that can characterize the aging state of multi-chips parallel IGBT device is particularly important for system active operation and maintenance and reliability improvement. This paper takes the widely used multi-chips parallel IGBT module as the research object. According to the failure mode of bond wire lift-off, the degradation law of electrothermal and magnetic characteristic parameters in the aging failure process of the multi-chips parallel IGBT module was studied, and finally the magnetic flux density was selected as the aging state monitoring parameter of the multi-chips parallel IGBT module.