Methodology of backside preparation applied on a MRAM to lead a logical investigation with a near-field probe

Louise Dumas,Christina Villeneuve-Faure,François Marc,Hélène Fremont, Christophe Guerin, Guillaume Bascoul

Microelectronics Reliability（2023）

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摘要

This paper presents a method for the preparation of a magnetic random access memory (MRAM) whose data are stored in magnetic tunnel junctions (MTJ) as resistance states, in order to read them by near-field probing.

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关键词

MRAM,Sample preparation,Backside opening,AFM,MEB

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