MBE growth of 3 μm-thick InGaSb/AlInGaSb QCL structures

Hiroaki Yasuda,Norihiko Sekine,Iwao Hosako

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)（2023）

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摘要

We proposed the use of the InGaSb/AlInGaSb material system to improve THz-QCL performance. We performed molecular beam epitaxy (MBE) growth of 3 μ m-thick InGaSb/AlInGaSb QCL structures on GaSb substrates. The threading dislocations were found locally. The dislocation density in the QCL layers increased compared to the samples with thinner QCL layers.

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