Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

Doped HfO2,as an emerging ferroelectric material,could overcome the shortcomings of traditional ferroelectrics[1].Hfo.5Zr0.5O2(HZO)is a good choice for Hf-doped materials because of its excellent ferroelectric properties and mature preparation process.In our previous studies,we proposed a new HZO switchable ferroelectric diode(FE diode)with several advantages,such as high operating speed,3D stack-ability,and built-in nonlinearity[2].From other work,the transport model of devices is complicated because of differ-ent structures and preparation processes.HZO ferroelectric devices,such as FE capacitors,ferroelectric transistors(Fe-FETs),and ferroelectric tunneling junctions(FTJs),could obey the Schottky model[3],Poole-Frankel model[4],or tunneling[5].Since FE diodes have the characteristics of programmable and bidirectional operation,etc.,which are different from other HZO devices,the physical origin of their electron transport must be studied.