22FDX^? EDMOS for 5G mmW Power Amplifier Applications

In this paper, we present the latest 22FDX((R)) 5G power amplifier (PA) performance enhancement based on a new PA device, EDMOS. A 2-stage PA measured at 22.9dBm Pout and 33% peak PAE with EDMOS as core device at PA stage. EDMOS achieves 20% higher voltage handling than the popular reference SLVT devices used in 22FDX((R)) 5G PA design [1], while not sacrificing the device on-resistance (R-ON). The cut-off frequency (fT) and maximum oscillation frequency (f(MAX)) are 281 GHz and 389 GHz, respectively, which is suitable for 5G PA applications. For Common-Source (CS) device, EVM measurement is also showing similar to 25% improvement over the reference SLVT device. The Pout and PAE of 2-stage PA are achieving a new record in the 22FDX((R)) CMOS based PA design, which makes this device as a strong candidate for 5G mmW (millimeter wave) PA in handset as well customer premises equipment (CPE).