K-band Receiver on SiGe BiCMOS Technology for SatCom Phased Array Systems

This paper presents a K-band receiver composed of a Low-Noise Amplifier (LNA), a double balanced Gilbert cell Mixer and a X4 frequency multiplier for SatCom phased-array systems. The circuit has been designed exploiting the 130-nm SiGe:CBiCMOS technology and fully characterized. Measurement results show a conversion gain up to 44 dB with a minimum of 42 dB at 18 GHz, a minimum NF of 2.7 dB at 18 GHz, and an image rejection always better than 14 dB. This circuit is biased by using 2 V for LNA and LO-chain, and 3.3 V for the Mixer; it draws a total current of 126 mA divided in 8 mA for LNA, 81 mA for LO chain and 27 mA for Mixer. Total power consumption is 267 mW. The complete receiver occupies an area of 3030 mu m x 1580 mu m pads included.