A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power

2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC(2023)

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摘要
We report a fully integrated 272 GHz direct-conversion transmitter in 250nm InP HBT technology. The transmitter has more than 18 dB conversion gain over 264-285 GHz, consumes 1.6W, and has 14.1dBm output power at 272 GHz. Its -3 dB bandwidth is 18 GHz, while its -6 dB bandwidth is 36 GHz. An internal 8:1 active frequency multiplier generates the local oscillator. To the authors' knowledge, the IC demonstrates record saturated output power for an integrated transmitter operating near 272 GHz.
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关键词
direct-conversion,double heterojunction bipolar transistor (DHBT),H-band,high efficiency,indium phosphide (InP),millimeter wave
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