Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip

Hady Yacoub, Marko Rausch, Christoph Stoelmacker,Ralf Doerner,Maruf Hossain,Ina Ostermay, Taylor Moule,Matthias Wietstruck,Steffen Knigge,Olaf Krueger,Wolfgang Heinrich

2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC（2023）

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摘要

In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.

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关键词

Heterointegration,power amplifier,InP,HBT,BiCMOS,mm-wave

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