High-performance red-emitting InGaN/AlGaN nanowire light-emitting diodes grown through porous template

We report on the achievement of uniform red color InGaN/AlGaN nanowire light-emitting diodes (LEDs) grown on n-type Si(111) by molecular beam epitaxy technique via anodic alumina oxide (AAO) membranes. The AAO template with pore-density -0.75 x 1010 cm-2 and hole-diameter -110 nm was prepared by anodization method. The devices demonstrate high optical output power of 10.4 mW under current injection of 200 mA at room temperature. Intensive red-light emission at 645 nm with luminous efficacy -11.82 lm/W and -17.75 lm/ W were recorded for 10 x 10 mu m2 and 100 x 100 mu m2, respectively. The emission intensity of highly ordered InGaN/AlGaN nanowire LED is twice stronger than that of the reference LED. Moreover, negligible blue-shift in peak emission from this red color mu LEDs was measured up to a current injection of 500 mA. The red LEDs exhibited stable emission with 87% color purity and retained approximately 80% of their initial luminescence intensity after 360-h continuous current applying. The results demonstrated an effective-cost route to fabricating high-efficiency nanowire LEDs for high-resolution micro-display applications.