Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

J. Mehta,I. Abid, R. Elwaradi, Y. Cordier,F. Medjdoub

e-Prime - Advances in Electrical Engineering, Electronics and Energy（2023）

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摘要

•Growth and electrical performance of GaN and AlGaN HFETs on bulk AlN substrates•High breakdown voltage up to 2500V for novel AlGaN HFETs on bulk AlN substrates•High voltage reliability prospects close to hard breakdown voltages of HFETs on AlN•Transistor derating and robustness comparison of GaN and AlGaN HFETs on AlN

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关键词

channel hfets,high voltage power electronics,bulk aln

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