SiC MOSFETs capacitance study

Ilaria Matacena,Luca Maresca,Michele Riccio,Andrea Irace,Giovanni Breglio,Santolo Daliento

e-Prime - Advances in Electrical Engineering, Electronics and Energy（2023）

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摘要

•SiC MOSFETs capacitance can give reliable insight in interface traps distribution.•Capacitance measured with floating terminals can provide additive information in TCAD model development.•Capacitance measured with positive-bias Drain exhibits a peak which is related to interface traps concentration.•Capacitance measured in different configurations can support the TCAD model description.

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capacitance,sic

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