Design and numerical analysis of CsSn 0.5 Ge 0.5 I 3 vertical photodetector using SCAPS-1D

In this work, a vertical photodetector accessing device configuration FTO/PCBM/CsSn 0.5 Ge 0.5 I 3 /MoO 3 /Au is numerically studied and analyzed by a solar cell capacitance simulator in one-dimension (SCAPS-1D) tool. The current density–voltage ( J – V ), energy bands diagram, and spectral response properties have been studied by SCAPS-1D. To enhance the demonstration of photodetectors, the impression of thickness, parasitic resistance, defect density of active layer, interface defect density, and back contact electrodes have been studied. After optimizing these factors, we attained the optimum value of short circuit current density ( J sc ) 19.64 mA/cm 2 and quantum efficiency has been studied for incoming light between 570 to 620 nm. The detectivity ( D *) and responsivity ( R ) of the simulated photodetector are 1.9 × 10 13 Jones and 0.34 A W − 1 , respectively. This study develops a low-cost, environmentally friendly approach for creating high-performance photodetectors, paving the foundation for future research in the use of optoelectronics devices.