Novel ESD characterization method for bipolar devices using a combined TLP system with dynamic base bias

Parasitic bipolar devices are omnipresent in CMOS- or BCD-technologies and special consideration needs to be taken to avoid their unintentional triggering. This paper reviews the behavior of parasitic bipolars during ESD events. A novel characterization method to dynamically apply a base-emitter bias while pulsing collector vs. emitter is presented.