Simulation study of the tunnel junction position effect on the parameters of the InxGa1-xN dual junction solar cell

The present work presents a SILVACO-Atlas numerical simulation to investigate the effect of the tunnel junction position on the performance of InxGa(1-x)Ndouble-junction solar cells under AM1.5 solar illumination. The proposed cell is composed of twoPN sub-cells, an upper sub-cell in In(0.1)Ga(0.9)Nand a lower sub-cell in In(0.4)Ga(0.6)Nfor the p-type and In(0.2)Ga(0.8)Nfor the n-type, connected by a tunnel junction in In0.4Ga0.6N. The cell offers a remarkable open-circuit voltage value of about 3.9Vand a good fill shape value of about 93. A cell with a small overall thickness can offer better transfer efficiency than a cell with a large thickness if the tunnel junction position is carefully chosen. The proposed cell can achieve a transfer efficiency of around 18% with an overall thickness of 0.652 mu m.