Field Effect Transistors With Semiconductor-Sensitized Gate for High-Sensitivity Hydrogen Detection

The increasing popularity of hydrogen (H-2) energy has led to a growing demand for highly sensitive and reliable H-2 sensors. In this work, we present a field effect transistor (FET) H-2 gas sensor with a semiconductorsensitized gate and achieved low subthreshold swing and significant current modulation effect. The FET-based sensor demonstrated excellent H-2 sensitivity, with a response of 62.8-250-ppm H-2 gas at 180 degrees C. An equivalent model of the sensor was also established to study the sensing mechanism behind the FET-based H-2 sensor. The results suggest that the interaction of the gas-sensitive film with H-2 molecules leads to a change in the potential of the floating gate (FG), which in turn modulates the channel current and allows the sensor to detect different H-2 concentrations. The proposed structure of the FET-based gas sensor offers significant potential for improving the sensitivity of H-2 detection.