NPN Si/SiGe memory selector with non-linearity>10⁵ and ON-current>6MA/cm²

Gaspard Hiblot,Taras Ravsher,Roger Loo,Bhuvaneshwari Yengula Venkata Ramana,Nathali Franchina Vergel,Andrea Fantini,Shamin Houshmand Sharifi,Nina Bazzazian,Kurt Wostyn, Loris Angelo Labbate,Sebastien Couet,Gouri Sankar Kar

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)（2023）

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摘要

This work reports on NPN Si/SiGe heterojunction bipolar latch-up memory selectors integrated in 300mm wafers. The selector height has been scaled down to sub-100nm dimensions. The Ge concentration is varied from 25% to 45%. The device obtained features an ON-current (I-ON) in the negative branch above 6MA/cm(2), and a non-linearity (NL) exceeding 105 hence meeting the STT-MRAM selector target specifications. Further, these selectors exhibit stable characteristics over 10(9) pulses.

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关键词

NPN, memory selector, latch-up

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NPN Si/SiGe memory selector with non-linearity>105 and ON-current>6MA/cm2

NPN Si/SiGe memory selector with non-linearity>10⁵ and ON-current>6MA/cm²