Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)(2023)
摘要
This paper investigates the reduction of the off-state capacitance (C
OFF
) of SOI-CMOS RF switches induced by the introduction of air microcavity in the back-end interconnection network. A detailed methodology combining electromagnetic and semiconductor transport simulations is used to separately evaluate the respective contributions of the interconnects and junction capacitances. A baseline switch and an optimized version of the same are studied to evaluate their ability to take advantage of air microcavities. Simulations show a reduction of 73 fF/mm regardless of the switch structure considered, resulting in a 24.6% and 30.6% improvement in C
OFF
for baseline and optimized switches, respectively, bringing the optimized version to a 60fs record Ron × Coff. This concept was experimentally implemented using a partial etch process that resulted in a reduction of 21.7 fF/mm, i.e., 7.2%. Finally, the implementation of a more isotropic and selective etching process using HF in vapor phase is shown to approach the optimal configuration of air microcavities.
更多查看译文
关键词
RF switch, Air microcavities, CMOS, SOI, Off-state capacitance, Vapor phase selective etching
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要