Study of an Avalanche Compensation Mirror for SiGe High Performance Power Amplifiers Dedicated to 5G Applications

This paper presents a current mirror which allows the full compensation of the avalanche current in bipolar transistors in the context of 5G telecommunications. This bias circuit is applied to a 27GHz power amplifier for 5G applications. Two types of current mirrors are compared to explore the impact of each topology on bipolar transistor avalanche effect. A detailed theoretical study and a methodology of use are proposed. The PA with its avalanche compensation mirror is implemented in a SiGe 130nm BiCMOS technology.