Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF₂ on Si(111)

The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed. We combined two approaches to reduce the film roughness: the post-growth electron irradiation and codeposition of additional Si during CaF2 growth. The application of the solid-phase epitaxy technique at the initial stage of film growth allowed for us to reduce surface roughness down to 1–2 nm.