Electrical and dielectric properties of RF sputtered nano Al 2 O 3 film annealed at 400 °C

Alumina (Al 2 O 3 ) film with thicknesses of 100 nm were deposited on n-Si substrate at room temperature by radio frequency (RF) magnetron sputtering, and Al 2 O 3 /n-Si structure was rapidly thermally annealed at 400 °C under vacuum conditions. Within the scope of this study, elemental analysis and post-metallization electrical/dielectric analyzes of this structure were carried out as a function of vacuum annealing. Quantitative elemental microanalysis of the Al 2 O 3 /n-Si structure annealed at temperature of 400 °C was performed by scanning electron microscopy with energy dispersive spectroscopy (SEM–EDS) method. Through SEM–EDS analysis, the structure exhibited a pattern with an Al/O atomic ratio of approximately 2/3. The electrical properties of the Au/n-Si structure with Al 2 O 3 interface layer annealed at temperature of 400 °C depending on the frequency (between 30 kHz and 1 MHz) and the voltage (± 4 V) using C–V and G/ω–V characteristics were obtained. In addition, the dielectric parameters such as dielectric constant, dielectric loss, loss tangent, and the electrical ac conductivity obtained by using the C and G/ω data and the dielectric properties of Au/Al 2 O 3 /n-Si structure were analysis depending on the frequency and voltage, as in the electrical analysis.