A D-band Wideband Double-Balanced Source-Driven Up-Conversion Mixer in 40-nm CMOS

2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)(2023)

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摘要
This paper presents a D-band wideband double-balanced up-conversion mixer using a 40-nm CMOS process. In conventional Gilbert cell mixers, the input signal is input to the gate of a MOSFET. However, the MOSFET gate has high input impedance, making it difficult to achieve wideband matching. In the proposed circuit, the gate width of the MOSFETs is appropriately adjusted and the signal is input directly to the source to achieve wideband characteristics. In addition, by reducing the number of MOSFETs in series, low-voltage operation is possible and high IP3 is achieved. The proposed circuit achieved a 3-dB bandwidth of 50.7 GHz and a maximum conversion gain of –11.5 dB. The supply voltage was 0.9 V and the power consumption was 8.1 mW. The LO input signal was –0.2 dBm.
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关键词
CMOS,D-band,gilbert cell,low power,millimeter-wave,source driven,sub-THz,up-conversion mixer,wideband
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