Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

•Quasi-vertical Schottky barrier diodes were fabricated on GaN on Si substrate.•The diodes exhibited ultra-low turn on voltage of 0.23 V and ideality factor of 1.02 being close to the ideal value.•Schottky barrier height was extracted from both current–voltage and capacitance–voltage curves.•Experimental current–voltage characteristics are consistent with the simulation results obtained using Silvaco TCAD software.•Temperature dependent reverse leakage current is attributed to variable range hopping mechanisms through dislocations.