The growth and expansive applications of amorphous Ga2O3

As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga2O3)is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 eV-5.3 eV allowing for deep-ultraviolet(deep-UV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,etc.Different from the strict processes for controllable crystalline Ga2O3(usually refer to as stable monoclinic β-Ga2O3),amorphous Ga2O3(a-Ga2O3)film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum techniques.Thus,a-Ga2O3 extremely facilitates important applications in various applied fields.Therefore,in this concise review,we summarize several major deposition methods for a-Ga2O3 films,of which the characteristics are discussed.Additionally,potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies.Subsequently,the applications of a-Ga2O3 thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.