Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain

We show electrical properties of a Ge-based top-gate metal-oxide-semiconductor field-effect transistor (MOSFET) structure with epitaxial ferromagnetic Heusler alloy/Ge Schottky-tunnel contacts, fabricated with a lowtemperature gate-stack process. For shaping the Ge-MOSFET with the ferromagnetic source and drain (S/D) contacts, we use a combination process of Ar+ ion milling and reactive ion etching (RIE). As a consequence of the formation of a gate stack (SiO2/GeO2) using a process temperature of 240 degrees C, we demonstrate inversion channel MOSFETs with a low gate-voltage operation (VG -5 V). Furthermore, we achieve a relatively high field-effect mobility (& mu;FE) of -300 cm2/Vs compared to those in a Si-based back-gate spin-MOSFET reported previously [Phys. Rev. B 102, 035305 (2020).]. This study will open a way for developing a Ge-based top-gate spin-MOSFET on the Si platform.