Temperature dependence of the bandgap of Eu doped {ZnCdO/ZnO}30 multilayer structures

A. Lysak,E. Przeździecka,A. Wierzbicka,R. Jakiela,Z. Khosravizadeh, M. Szot, A. Adhikari,A. Kozanecki

Thin Solid Films（2023）

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摘要

•Eu-doped {ZnCdO/ZnO}30 multilayer structures were grown by molecular beam epitaxy.•Annealing has an effect on Eu and Cd distribution in the films.•Eu concentration influences the band gap.•The band gap of samples were analyzed by Varshni and Bose–Einstein models.

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关键词

Zinc oxide,Molecular beam epitaxy,Multilayer structure,Europium doping,Band gap,Rapid thermal processing,Varshni equation,Bose-Einstein equation

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