Relationship between graphene nucleation density and epitaxial growth orientation on Cu(111) surfaces

MATERIALS TODAY CHEMISTRY(2023)

引用 0|浏览6
暂无评分
摘要
Crystal domain alignment is required to produce large, single-crystal, two-dimensional materials which are synthesized by epitaxial growth, but it has been unclear what is needed to achieve the alignment. It is presumed to be possible when the symmetries of the two-dimensional material and substrate are consistent. However, experiments show that although graphene and the Cu(111) surface have the same symmetry, graphene domains grown on Cu(111) are not always well aligned. We developed a physical model and used first principles calculations to explain these observations. It is found that small hex-agonal graphene domains are always misorientated on the Cu(111) substrate because the vertexes of the graphene domains have preferred binding sites. These misorientation angles vary with the domain size, with near-perfect alignment of the domains on the substrate only being achieved when they become hundreds of nanometers in size. Our results indicate that low nucleation density of graphene on Cu(111) surfaces is necessary to achieve epitaxial alignment of graphene domains.& COPY; 2023 Elsevier Ltd. All rights reserved.
更多
查看译文
关键词
Single crystal graphene,Chemical vapor deposition,Grain boundaries,2D materials,Computational modelling,Graphene growth
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要