订阅小程序
旧版功能

Nonvolatile Resistive Switching in Lead-Free La2CoMnO6-based Memory Device

Fengzhen Lv,Yongfu Qin,Yuan Gao, Fangfang Huang,Huimin Tang, Jun Liu,Lizhen Long, Yong Yang

MATERIALS TODAY COMMUNICATIONS(2023)

引用 1|浏览11
关键词
La2CoMnO6,Nonvolatile resistive switching,Oxygen vacancy,Density functional theory,Space-charge-limited current,Schottky-like barrier
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要