Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Temperature dependent electrical-parameters and CTCs in Au/Al2O3/n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, Phi(B0)) increases with increasing temperature. The value of Richardson constant (A*) and activation energy (Ea) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34 x 10(-3) A.cm(-2)K(-2), respectively. This low A* value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, Phi(Bo) vs n and Phi(Bo) vs q/(2kT) curves were illustrated. The F (Phi) over bar (B) value was found as 1.19 eV from the linear Phi(B0) vs n plot for ideal case (n = 1). The mean-value of BH ((Phi)over bar>(B0)) and standart deviation (ss) values were found from the FBo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of sigma(s), RP was modified and then (Phi)over bar>(B0) and A* values were found as 1.128 eV and 108.88 Acm(-2)K(-2), respectively, and this value of A* very close to its theoretical value (=112 Acm(-2)K(-2)). The surface state density (N-ss) were also obtained from the forward bias IV data for three-temperatures. (c) 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.