Avoiding Plasma Damage: MacEtch enabled ?-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination

Although highly promising, the performance of beta Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of beta Ga2O3 FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific onresistance (Ron,sp) of 6.5 mO center dot cm(2) and a 370 V breakdown voltage are achieved. The MacEtchformed FinFETs demonstrate near-zero (9.7 mV) hysteresis.