Dual-Float-Gate Capacitor for Low-Voltage Multi-Level Nonvolatile Memory with Enhanced Retention

Low-voltage multi-level non-volatile memory has been extensively desired to satisfy the need of the data center and neuromorphic artificial intelligent computing. In this work, n-Si/Al2O3/TiN/Al2O3/TiN/Al2O3/TiN stack is proposed to represent the potential of low-voltage multi-level memory and neuromorphic computing application. It features dual metal float-gate layers to achieve low-voltage multilevel storage at V-p=-5 V and enhanced long-term high-temperature retention (10(4) s) at 85 degrees C.