Enhancement in Bipolar Conductance Linearity by One Transistor - One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks

This work reports conductance linearity enhancement in one-transistor-one-RRAM (1T1R) cell with non-filamentary PCMO-RRAM. First, we show analog resistive switching of PCMO-RRAM(1R) in DC-IV. Second, we demonstrate gradual conductance change (potentiation (LTP) /depression (LTD)) in transient-IV. Third, an electrical connection defined between a commercialized transistor and fabricated PCMO-RRAM emulates 1T1R, demonstrating resistive switching via transistor(1T). Finally, improved conductance linearity (25X in LTP/5X in LTD) with 1T1R is shown, which is best compared with state-of-the-art RRAM devices.