Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO2-ZrO2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

We report the BEOL compatible poly-Si thin-film transistor (TFT) below 400 degrees C by green laser crystallization and microwave annealing. The TEM image reveals the HfO2-ZrO2 superlattice (SL-HZO) structure of the dielectric layer. The p-type device shows good electrical properties, including I-ON/I-OFF ratio > 10(6), subthreshold swing (SS) = 75 mV/dec, and low DIBL = 24.18 mV/V. Furthermore, we demonstrate the characteristics of the CMOS inverter and the voltage transfer curve (VTC) indicates the acceptable voltage gain.