Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO

We report the vertically stacked Ge diamond-shape nanowires (NWs) gate-all-around field-effect transistor (GAAFET) with ferroelectric (Fe) layer HZO = 2 nm / Al2O3 = 4 nm. The in-situ ALD ozone treatment is applied to reduce the interface defect density (Dit). Furthermore, the transfer I-D-V-G curves of the device shows superior performance with a minimum steep sub-threshold slope (SSMIN) of 49 mV/dec. The formation of the vertically stacked Ge diamond-shape NWs FeGAAFET could be compatible with current CMOS technology platform and have high potential for high-performance IC applications.