Electron emission characteristics of field emitter arrays coated with over-stoichiometric hafnium nitride

Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours