High Energy Passively Q-Switched Laser on a CMOS Platform

High energy Q-switched lasers are highly desirable for various applications ranging from sensing, micro machining and medical applications especially in the long wavelength window $(> 1.8\upmu \mathrm{m})$ . Such lasers are usually based on large benchtop solid-state or fibre systems. Integrated rare-earth doped medium [1]–[5] has been an excellent candidate for high energy pulse generation with high beam quality. In this work, we show CMOS compatible Q-switched laser around 1.9 $\mu \mathrm{m}$ with an on-chip output energy over 150 nJ in a footprint <10 mm ² . The pulse energy demonstrated in this work is comparable to passively Q-switched fibre lasers [6].