Effect of Be doping in active regions on the performance of 1.3 m InAs quantum dot lasers

InAs DWELL quantum dot lasers were grown on GaAs(100) substrate by molecular beam epitaxy technolo-gy, and the effect of Be doping in active regions on the performance of InAs quantum dot lasers has been studied. The results show that Be-doped in the active region could effectively reduce the threshold current density, improve the out-put power, and increase the temperature stability of the InAs quantum dot laser. The threshold current of Be-doped InAs quantum dot laser was reduced to 12 mA, and the corresponding threshold current density was 100 A/cm2. The highest output power of the laser was 183 mW, and the highest operating temperature reached 130 celcius. This is of great signifi-cance for the application of InAs quantum dot laser device in the optical communication system.