Modelling Memristive Devices via Ideal Memristor and Nonlinear Resistors.

The paper shows that it is possible to exploit a combination of basic algebraic circuit elements corresponding to ideal memristors and nonlinear resistors in order to obtain the constitutive equation of a memristive device (a.k.a. extended memristor). By a suitable design of the characteristics of the constitutive elements, such extended memristors are able to approximate the model describing several real memristor devices.For the sake of simplicity, the work focuses on first–order memristor device described by the state–dependent Ohm’s law with a single internal variable, but the circuit design methodology proposed in this manuscript can be easily extended to develop memristor device models by identifying a linear resistive multiport connected to ideal memristors and nonlinear resistors.