Ni/TiO2/ $\Beta$-Ga2o3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage.
DRC（2023）
Key words
breakdown voltage,heterojunction diodes,high predicted critical field strength,Ni-TiO2-Ga2O3/int,NiO/int,p-NiO guard ring,power electronic applications,ultra-wide bandgap semiconductor,Vertical Schottky diodes
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