Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity
IEEE Sensors Journal(2023)
摘要
The MSM structures based on high-quality 1.6-
$\mu \text{m}$
-thick
$\alpha $
-gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency (EQE), and detectivity of MSM structures based on
$\alpha $
-Ga2O3 were studied in the wavelength range of 205–260 nm. The responsivity, the EQE, and the detectivity are
$7.19\times104$
A
$\times \,\,\text{W}^{-{1}}$
,
$3.79\times105$
arb.un., and
$1.12\times1018$
Hz
$^{\text {0.{5}}} \times $
cm
$\times \,\,\text{W}^{-{1}}$
, respectively, for structures with an interelectrode distance of 30
$\mu \text{m}$
at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in
$\alpha $
-Ga2O3. The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown.
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关键词
α-gallium oxide Ga₂O₃,halide vapor phase epitaxy (HVPE),solar-blind ultraviolet detectors (SBUVDs)
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